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Characterization and optimization of sub-32nm FinFET devices for ESD applications

dc.contributor.authorThijs, Steven
dc.contributor.authorTremouilles, David
dc.contributor.authorRuss, Christian
dc.contributor.authorGriffoni, Alessio
dc.contributor.authorCollaert, Nadine
dc.contributor.authorRooyackers, Rita
dc.contributor.authorLinten, Dimitri
dc.contributor.authorScholz, Mirko
dc.contributor.authorDuvvury, Charvaka
dc.contributor.authorGossner, Harald
dc.contributor.authorJurczak, Gosia
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-17T11:13:51Z
dc.date.available2021-10-17T11:13:51Z
dc.date.issued2008
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14549
dc.sourceIIOimport
dc.titleCharacterization and optimization of sub-32nm FinFET devices for ESD applications
dc.typeJournal article
dc.contributor.imecauthorThijs, Steven
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecThijs, Steven::0000-0003-2889-8345
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage3507
dc.source.endpage3516
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue12
dc.source.volume55
imec.availabilityPublished - open access


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