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DC and RF characteristics of a 60-nm FinFET over a wide temperature range

dc.contributor.authorTinoco, Julio
dc.contributor.authorParvais, Bertrand
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorRaskin, Jean-Pierre
dc.date.accessioned2021-10-17T11:17:30Z
dc.date.available2021-10-17T11:17:30Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14559
dc.sourceIIOimport
dc.titleDC and RF characteristics of a 60-nm FinFET over a wide temperature range
dc.typeProceedings paper
dc.contributor.imecauthorParvais, Bertrand
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecParvais, Bertrand::0000-0003-0769-7069
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage57
dc.source.endpage60
dc.source.conferenceEUROSOI Workshop Proceedings: 4th Workshop of the Thematic Network on Silicon-on-Insulator Technology, Devices and Circuits
dc.source.conferencedate23/01/2008
dc.source.conferencelocationCork Ireland
imec.availabilityPublished - open access


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