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Mobility and dielectric quality of 1-nm EOT HfSiON on Si(110) and (100)

dc.contributor.authorTrojman, Lionel
dc.contributor.authorPantisano, Luigi
dc.contributor.authorFerain, Isabelle
dc.contributor.authorSeveri, Simone
dc.contributor.authorMaes, Herman
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-17T11:26:07Z
dc.date.available2021-10-17T11:26:07Z
dc.date.issued2008
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14582
dc.sourceIIOimport
dc.titleMobility and dielectric quality of 1-nm EOT HfSiON on Si(110) and (100)
dc.typeJournal article
dc.contributor.imecauthorSeveri, Simone
dc.contributor.imecauthorGroeseneken, Guido
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage3414
dc.source.endpage3420
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue12
dc.source.volume55
imec.availabilityPublished - open access


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