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Characterization of intragrain defects in polycrystalline silicon layers obtained by aluminum-induced crystallization and epitaxy

dc.contributor.authorVan Gestel, Dries
dc.contributor.authorGordon, Ivan
dc.contributor.authorBender, Hugo
dc.contributor.authorClemente, Francesca
dc.contributor.authorBeaucarne, Guy
dc.contributor.authorPoortmans, Jef
dc.date.accessioned2021-10-17T11:48:13Z
dc.date.available2021-10-17T11:48:13Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14641
dc.sourceIIOimport
dc.titleCharacterization of intragrain defects in polycrystalline silicon layers obtained by aluminum-induced crystallization and epitaxy
dc.typeOral presentation
dc.contributor.imecauthorGordon, Ivan
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecGordon, Ivan::0000-0002-0713-8403
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewno
dc.source.conferenceMRS Spring Meeting Symposium A: Amorphous and Polycrystalline Thin-Film Silicon Science and Technology
dc.source.conferencedate24/03/2008
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec


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