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The frequency doubling performance of GaAs and InP HEMTs characterized by active harmonic load-pull measurements

dc.contributor.authorSchreurs, Dominique
dc.contributor.authorRahal, A.
dc.contributor.authorMerza, B.
dc.contributor.authorNauwelaers, Bart
dc.contributor.authorBosisio, R.
dc.contributor.authorVan Rossum, Marc
dc.date.accessioned2021-09-29T15:23:05Z
dc.date.available2021-09-29T15:23:05Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1465
dc.sourceIIOimport
dc.titleThe frequency doubling performance of GaAs and InP HEMTs characterized by active harmonic load-pull measurements
dc.typeProceedings paper
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorNauwelaers, Bart
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage155
dc.source.endpage160
dc.source.conferenceProceedings 4th International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits - INMMC
dc.source.conferencedate10/10/1996
dc.source.conferencelocationDuisburg Germany
imec.availabilityPublished - open access


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