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DC, LF dispersion and RF characterisation of short-time stressed InP based LM-HEMTs

dc.contributor.authorSchreurs, Dominique
dc.contributor.authorSpiers, Ariane
dc.contributor.authorDe Raedt, Walter
dc.contributor.authorvan der Zanden, Koen
dc.contributor.authorBaeyens, Yves
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorNauwelaers, Bart
dc.contributor.authorVan Rossum, Marc
dc.date.accessioned2021-09-29T15:23:13Z
dc.date.available2021-09-29T15:23:13Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1466
dc.sourceIIOimport
dc.titleDC, LF dispersion and RF characterisation of short-time stressed InP based LM-HEMTs
dc.typeJournal article
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorDe Raedt, Walter
dc.contributor.imecauthorNauwelaers, Bart
dc.source.peerreviewno
dc.source.beginpage1911
dc.source.endpage1914
dc.source.journalMicroelectronics and Reliability
dc.source.volume36
imec.availabilityPublished - imec
imec.internalnotesPaper from ESREF '96 - 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis. October 8-11, 1996. Enschede, The Netherlands.


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