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Strain enhanced NMOS using in situ doped embedded Si1-xCx S/D stressors with up to 1.5% substitutional carbon content grown using a novel deposition process

dc.contributor.authorVerheyen, Peter
dc.contributor.authorMachkaoutsan, Vladimir
dc.contributor.authorBauer, Matthias
dc.contributor.authorWeeks, Doran
dc.contributor.authorKerner, Christoph
dc.contributor.authorBender, Hugo
dc.contributor.authorShamiryan, Denis
dc.contributor.authorLoo, Roger
dc.contributor.authorHoffmann, Thomas
dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.contributor.authorThomas, Shawn G.
dc.date.accessioned2021-10-17T12:30:47Z
dc.date.available2021-10-17T12:30:47Z
dc.date.issued2008-06
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14746
dc.sourceIIOimport
dc.titleStrain enhanced NMOS using in situ doped embedded Si1-xCx S/D stressors with up to 1.5% substitutional carbon content grown using a novel deposition process
dc.typeJournal article
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorMachkaoutsan, Vladimir
dc.contributor.imecauthorKerner, Christoph
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1206
dc.source.endpage1208
dc.source.journalIEEE Electron Device Letters
dc.source.issue11
dc.source.volume29
imec.availabilityPublished - open access


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