Authors

Verheyen, Peter; Machkaoutsan, Vladimir; Bauer, Matthias; Weeks, Doran; Kerner, Christoph; Bender, Hugo; Shamiryan, Denis; Loo, Roger; Hoffmann, Thomas; Absil, Philippe; Biesemans, Serge; Thomas, Shawn G.

ISSN

0741-3106

Issue

11

Journal

IEEE Electron Device Letters

Volume

29

Title

Strain enhanced NMOS using in situ doped embedded Si1-xCx S/D stressors with up to 1.5% substitutional carbon content grown using a novel deposition process

Publication type

Journal article

Embargo date

9999-12-31