Publication:

Strain enhanced NMOS using in situ doped embedded Si1-xCx S/D stressors with up to 1.5% substitutional carbon content grown using a novel deposition process

Date

2008-06
Journal article
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dc.contributor.authorVerheyen, Peter
dc.contributor.authorMachkaoutsan, Vladimir
dc.contributor.authorBauer, Matthias
dc.contributor.authorWeeks, Doran
dc.contributor.authorKerner, Christoph
dc.contributor.authorBender, Hugo
dc.contributor.authorShamiryan, Denis
dc.contributor.authorLoo, Roger
dc.contributor.authorHoffmann, Thomas
dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.contributor.authorThomas, Shawn G.
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorMachkaoutsan, Vladimir
dc.contributor.imecauthorKerner, Christoph
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-17T12:30:47Z
dc.date.available2021-10-17T12:30:47Z
dc.date.embargo9999-12-31
dc.date.issued2008-06
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14746
dc.source.beginpage1206
dc.source.endpage1208
dc.source.issue11
dc.source.journalIEEE Electron Device Letters
dc.source.volume29
dc.title

Strain enhanced NMOS using in situ doped embedded Si1-xCx S/D stressors with up to 1.5% substitutional carbon content grown using a novel deposition process

dc.typeJournal article
dspace.entity.typePublication
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