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Selective epitaxial deposition of Ge on Si: facet formation and how to avoid it

dc.contributor.authorWang, Gang
dc.contributor.authorLeys, Frederik
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorBrunco, David
dc.contributor.authorMeuris, Marc
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-17T12:41:02Z
dc.date.available2021-10-17T12:41:02Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14771
dc.sourceIIOimport
dc.titleSelective epitaxial deposition of Ge on Si: facet formation and how to avoid it
dc.typeMeeting abstract
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage2467
dc.source.conference214th ECS Meeting
dc.source.conferencedate12/10/2008
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access
imec.internalnotesECS Meeting Abstracts; Vol. MA 2008-02


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