Gate length effect on the RTS noise amplitude in SOI MOSFETs
dc.contributor.author | Simoen, Eddy | |
dc.contributor.author | Claeys, Cor | |
dc.date.accessioned | 2021-09-29T15:25:03Z | |
dc.date.available | 2021-09-29T15:25:03Z | |
dc.date.issued | 1996 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/1481 | |
dc.source | IIOimport | |
dc.title | Gate length effect on the RTS noise amplitude in SOI MOSFETs | |
dc.type | Journal article | |
dc.contributor.imecauthor | Simoen, Eddy | |
dc.contributor.orcidimec | Simoen, Eddy::0000-0002-5218-4046 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | no | |
dc.source.beginpage | 181 | |
dc.source.endpage | 183 | |
dc.source.journal | IEEE Electron Device Letters | |
dc.source.issue | 4 | |
dc.source.volume | 17 | |
imec.availability | Published - open access |