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Gate length effect on the RTS noise amplitude in SOI MOSFETs
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Gate length effect on the RTS noise amplitude in SOI MOSFETs
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Date
1996
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Simoen, Eddy
;
Claeys, Cor
Journal
IEEE Electron Device Letters
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1912
since deposited on 2021-09-29
Acq. date: 2025-12-16
Citations
Metrics
Views
1912
since deposited on 2021-09-29
Acq. date: 2025-12-16
Citations