Publication:

Gate length effect on the RTS noise amplitude in SOI MOSFETs

Date

1996
Journal article
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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0002-5218-4046
cris.virtualsource.department715a9ada-0798-46d2-a8ca-4775db9a8e46
cris.virtualsource.orcid715a9ada-0798-46d2-a8ca-4775db9a8e46
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-09-29T15:25:03Z
dc.date.available2021-09-29T15:25:03Z
dc.date.embargo9999-12-31
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1481
dc.source.beginpage181
dc.source.endpage183
dc.source.issue4
dc.source.journalIEEE Electron Device Letters
dc.source.volume17
dc.title

Gate length effect on the RTS noise amplitude in SOI MOSFETs

dc.typeJournal article
dspace.entity.typePublication
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