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Trapping in 1nm EOT high-k / MG

dc.contributor.authorZahid, Mohammed
dc.contributor.authorPantisano, Luigi
dc.contributor.authorDegraeve, Robin
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorTrojman, Lionel
dc.contributor.authorFerain, Isabelle
dc.contributor.authorsan andres, e
dc.contributor.authorShickova, Adelina
dc.contributor.authorO'Connor, Robert
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHeyns, Marc
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-17T13:05:04Z
dc.date.available2021-10-17T13:05:04Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14829
dc.sourceIIOimport
dc.titleTrapping in 1nm EOT high-k / MG
dc.typeProceedings paper
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage77
dc.source.endpage84
dc.source.conferencePhysics and Technology of High-k Dielectrics 6
dc.source.conferencedate13/10/2008
dc.source.conferencelocationHonolulu, HI USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 16, Issue 5


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