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Dominant layer for stress-induced positive charges in Hf-based gate stacks

dc.contributor.authorZhang, Jian F.
dc.contributor.authorChang, M.H.
dc.contributor.authorJi, Z.
dc.contributor.authorLin, L.
dc.contributor.authorFerain, Isabelle
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorPantisano, Luigi
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-17T13:06:25Z
dc.date.available2021-10-17T13:06:25Z
dc.date.issued2008
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14832
dc.sourceIIOimport
dc.titleDominant layer for stress-induced positive charges in Hf-based gate stacks
dc.typeJournal article
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1360
dc.source.endpage1363
dc.source.journalIEEE Electron Device Letters
dc.source.issue12
dc.source.volume29
imec.availabilityPublished - open access


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