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An initial exploration of GaN growth on Ge-(111) substrate

dc.contributor.authorZhang, Y.
dc.contributor.authorMcAleese, C.
dc.contributor.authorXiu, H.
dc.contributor.authorHumphreys, C.J.
dc.contributor.authorLieten, Ruben
dc.contributor.authorDegroote, Stefan
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-17T13:08:46Z
dc.date.available2021-10-17T13:08:46Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14838
dc.sourceIIOimport
dc.titleAn initial exploration of GaN growth on Ge-(111) substrate
dc.typeProceedings paper
dc.contributor.imecauthorLieten, Ruben
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewno
dc.source.beginpage61
dc.source.endpage64
dc.source.conferenceMicroscopy of Semiconducting Materials 2007. Proceedings of the 15th Conference
dc.source.conferencedate2/04/2007
dc.source.conferencelocationCambridge UK
imec.availabilityPublished - imec
imec.internalnotesSpringer Proceedings in Physics; Vol. 120


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