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Hole mobility in Ge and GaAs p-channel inversion layers with low-k insulator

dc.contributor.authorZhang, Yan
dc.contributor.authorFischetti, Massimo
dc.contributor.authorSoree, Bart
dc.contributor.authorMagnus, Wim
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-17T13:09:09Z
dc.date.available2021-10-17T13:09:09Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14839
dc.sourceIIOimport
dc.titleHole mobility in Ge and GaAs p-channel inversion layers with low-k insulator
dc.typeProceedings paper
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorMagnus, Wim
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.conference38th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate15/09/2008
dc.source.conferencelocationEdinburgh UK
imec.availabilityPublished - open access


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