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Theory of hole mobility in Ge p-channel inversion layer

dc.contributor.authorZhang, Yan
dc.contributor.authorFischetti, Max
dc.contributor.authorSoree, Bart
dc.contributor.authorMagnus, Wim
dc.date.accessioned2021-10-17T13:09:32Z
dc.date.available2021-10-17T13:09:32Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14840
dc.sourceIIOimport
dc.titleTheory of hole mobility in Ge p-channel inversion layer
dc.typeMeeting abstract
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorMagnus, Wim
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.source.peerreviewno
dc.source.conference22nd General Conference of the Condensed Matter Division of the European Physical Society
dc.source.conferencedate25/08/2008
dc.source.conferencelocationRome Italy
imec.availabilityPublished - imec


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