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Process-induced positive charges in Hf-based gate stacks

dc.contributor.authorZhao, C.Z.
dc.contributor.authorZhang, J.F.
dc.contributor.authorChang, M.H.
dc.contributor.authorPeaker, A.R.
dc.contributor.authorHall, S.
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorPantisano, Luigi
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-17T13:10:26Z
dc.date.available2021-10-17T13:10:26Z
dc.date.issued2008
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14842
dc.sourceIIOimport
dc.titleProcess-induced positive charges in Hf-based gate stacks
dc.typeJournal article
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage14507
dc.source.journalJournal of Applied Physics
dc.source.issue1
dc.source.volume103
imec.availabilityPublished - open access


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