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Stress-induced positive charge in Hf-based gate dielectrics: impact on device performance and a framework for the defect

dc.contributor.authorZhao, C.Z.
dc.contributor.authorZhang, Jian F.
dc.contributor.authorChang, Mo H.
dc.contributor.authorPeaker, Anthony R.
dc.contributor.authorHall, Stephen
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorPantisano, Luigi
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-17T13:10:53Z
dc.date.available2021-10-17T13:10:53Z
dc.date.issued2008
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14843
dc.sourceIIOimport
dc.titleStress-induced positive charge in Hf-based gate dielectrics: impact on device performance and a framework for the defect
dc.typeJournal article
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1647
dc.source.endpage1656
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue7
dc.source.volume55
dc.identifier.urlhttp://ieeexplore.ieee.org/iel5/16/4545026/04545056.pdf?tp=&arnumber=4545056&isnumber=4545026
imec.availabilityPublished - open access


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