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A DRAM compatible Cu contact using self-aligned Ta-silicide and Ta-barrier

dc.contributor.authorZhao, Chao
dc.contributor.authorAhn, Jae Young
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorDemuynck, Steven
dc.contributor.authorTokei, Zsolt
dc.date.accessioned2021-10-17T13:11:18Z
dc.date.available2021-10-17T13:11:18Z
dc.date.issued2008
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14844
dc.sourceIIOimport
dc.titleA DRAM compatible Cu contact using self-aligned Ta-silicide and Ta-barrier
dc.typeJournal article
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorTokei, Zsolt
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage2009
dc.source.endpage2012
dc.source.journalMicroelectronic Engineering
dc.source.issue10
dc.source.volume85
imec.availabilityPublished - open access


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