Show simple item record

Valence band energy shift in SiGe quantum wells grown in SiO2 by using the condensation technique

dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorStesmans, Andre
dc.contributor.authorSouriau, Laurent
dc.contributor.authorMeuris, Marc
dc.date.accessioned2021-10-17T21:17:20Z
dc.date.available2021-10-17T21:17:20Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14881
dc.sourceIIOimport
dc.titleValence band energy shift in SiGe quantum wells grown in SiO2 by using the condensation technique
dc.typeMeeting abstract
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewno
dc.source.conferenceE-MRS Spring Meeting Symposium I: Silicon and Germanium Issues for Future CMOS Devices
dc.source.conferencedate8/06/2009
dc.source.conferencelocationStrasbourg France
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record