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Gate induced floating body effect behavior in uniaxially strained SOI nMOSFETs

dc.contributor.authorAgopian, Paula G.D.
dc.contributor.authorPacheco, Vinicius H.
dc.contributor.authorMartino, Joao A.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-17T21:17:28Z
dc.date.available2021-10-17T21:17:28Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14887
dc.sourceIIOimport
dc.titleGate induced floating body effect behavior in uniaxially strained SOI nMOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage39
dc.source.endpage40
dc.source.conference5th EUROSOI Workshop
dc.source.conferencedate19/01/2009
dc.source.conferencelocationGöteborg Sweden
imec.availabilityPublished - imec


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