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The 1/f noise behaviour of interface engineered polysilicon emitter bipolar transistors

dc.contributor.authorSimoen, Eddy
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorCuthbertson, Alan
dc.contributor.authorClaeys, Cor
dc.contributor.authorDeferm, Ludo
dc.date.accessioned2021-09-29T15:25:56Z
dc.date.available2021-09-29T15:25:56Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1488
dc.sourceIIOimport
dc.titleThe 1/f noise behaviour of interface engineered polysilicon emitter bipolar transistors
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorDeferm, Ludo
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage961
dc.source.endpage964
dc.source.conferenceProceedings of the 26th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate9/09/1996
dc.source.conferencelocationBologna Italy
imec.availabilityPublished - open access


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