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Channel hot-carrier degradation in short-channel transistors with high-k/metal gate stacks

dc.contributor.authorAmat, Esteve
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorDegraeve, Robin
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorRodríguez, Rosana
dc.contributor.authorNafría, Montse
dc.contributor.authorAymerich, Xavier
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-17T21:17:41Z
dc.date.available2021-10-17T21:17:41Z
dc.date.issued2009
dc.identifier.issn1530-4388
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14895
dc.sourceIIOimport
dc.titleChannel hot-carrier degradation in short-channel transistors with high-k/metal gate stacks
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.source.peerreviewyes
dc.source.beginpage425
dc.source.endpage430
dc.source.journalIEEE Transactions on Device and Materials Reliability
dc.source.issue3
dc.source.volume9
imec.availabilityPublished - imec


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