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Competing degradation mechanisms in short-channel transistors under channel hot-carrier stress at elevated temperatures

dc.contributor.authorAmat, Esteve
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorDegraeve, Robin
dc.contributor.authorRodríguez, Rosana
dc.contributor.authorNafría, Montse
dc.contributor.authorAymerich, Xavier
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-17T21:17:45Z
dc.date.available2021-10-17T21:17:45Z
dc.date.issued2009
dc.identifier.issn1530-4388
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14897
dc.sourceIIOimport
dc.titleCompeting degradation mechanisms in short-channel transistors under channel hot-carrier stress at elevated temperatures
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.source.peerreviewyes
dc.source.beginpage454
dc.source.endpage458
dc.source.journalIEEE Transactions on Device and Materials Reliability
dc.source.issue3
dc.source.volume9
imec.availabilityPublished - imec


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