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Positive and negative bias temperature instability in La2O3 and Al2O3 capped high-k MOSFETs

dc.contributor.authorAoulaiche, Marc
dc.contributor.authorKaczer, Ben
dc.contributor.authorCho, Moon Ju
dc.contributor.authorHoussa, Michel
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorAkheyar, Amal
dc.contributor.authorSchram, Tom
dc.contributor.authorRoussel, Philippe
dc.contributor.authorMaes, Herman
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorBiesemans, Serge
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-17T21:17:58Z
dc.date.available2021-10-17T21:17:58Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14903
dc.sourceIIOimport
dc.titlePositive and negative bias temperature instability in La2O3 and Al2O3 capped high-k MOSFETs
dc.typeProceedings paper
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1014
dc.source.endpage1018
dc.source.conference47th Annual IEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate26/04/2009
dc.source.conferencelocationMontreal Canada
imec.availabilityPublished - open access


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