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Influence of the strain-relaxation induced defect creation on the lekage current of embedded Si1-xGex source/drain junctions

dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVissouvanadin Soubaretty, Bertrand
dc.contributor.authorEneman, Geert
dc.contributor.authorVerheyen, Peter
dc.contributor.authorLoo, Roger
dc.contributor.authorClaeys, Cor
dc.contributor.authorMachkaoutsan, Vladimir
dc.contributor.authorTomasini, Pierre
dc.contributor.authorThomas, Shawn
dc.date.accessioned2021-10-17T21:20:10Z
dc.date.available2021-10-17T21:20:10Z
dc.date.issued2009-06
dc.identifier.issn1610-1634
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14948
dc.sourceIIOimport
dc.titleInfluence of the strain-relaxation induced defect creation on the lekage current of embedded Si1-xGex source/drain junctions
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorMachkaoutsan, Vladimir
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewyes
dc.source.beginpage1901
dc.source.endpage1905
dc.source.journalPhysica Status Solidi C
dc.source.issue8
dc.source.volume6
imec.availabilityPublished - imec


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