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dc.contributor.authorBinetti, P.R.A.
dc.contributor.authorLeijtens, X.J.M.
dc.contributor.authorde Vries, T.
dc.contributor.authorOei, Y.S.
dc.contributor.authorDi Cioccio, L.
dc.contributor.authorFedeli, J.M.
dc.contributor.authorLagahe, C.
dc.contributor.authorVan Campenhout, J.
dc.contributor.authorVan Thourhout, Dries
dc.contributor.authorVan Veldhoven, P.J.
dc.contributor.authorNötzel, R.
dc.contributor.authorSmit, M.K.
dc.date.accessioned2021-10-17T21:24:29Z
dc.date.available2021-10-17T21:24:29Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15005
dc.sourceIIOimport
dc.titleInP/InGaAs photodetector on SOI circuitry
dc.typeProceedings paper
dc.contributor.imecauthorVan Thourhout, Dries
dc.contributor.orcidimecVan Thourhout, Dries::0000-0003-0111-431X
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage214
dc.source.endpage216
dc.source.conference6th IEEE International Conference on Group IV Photonics
dc.source.conferencedate9/09/2009
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotespaper FA7


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