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Si passivation for high-k gate dielectrics on GE MOSFETs

dc.contributor.authorCaymax, Matty
dc.contributor.authorMitard, Jerome
dc.contributor.authorMartens, Koen
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorMeuris, Marc
dc.contributor.authorLoo, Roger
dc.date.accessioned2021-10-17T21:32:12Z
dc.date.available2021-10-17T21:32:12Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15073
dc.sourceIIOimport
dc.titleSi passivation for high-k gate dielectrics on GE MOSFETs
dc.typeOral presentation
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.conference3rd International Workshop on High-k Dielectrics on High Mobility Channel Materials
dc.source.conferencedate19/01/2009
dc.source.conferencelocationHsinchu Taiwan
imec.availabilityPublished - imec


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