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Fabrication and characterization of Si and hetero-junction tunnel field effect transistors

dc.contributor.authorClaeys, Cor
dc.contributor.authorLeonelli, Daniele
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandooren, Anne
dc.contributor.authorVerhulst, Anne
dc.contributor.authorHeyns, Marc
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDe Gendt, Stefan
dc.date.accessioned2021-10-17T21:37:10Z
dc.date.available2021-10-17T21:37:10Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15109
dc.sourceIIOimport
dc.titleFabrication and characterization of Si and hetero-junction tunnel field effect transistors
dc.typeOral presentation
dc.contributor.imecauthorLeonelli, Daniele
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecLeonelli, Daniele::0000-0003-1596-7284
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.source.peerreviewno
dc.source.conferenceGlobal COE International Symposium Silicon Nano Devices in 2030: Prospects by World's Leading Scientists
dc.source.conferencedate13/10/2009
dc.source.conferencelocationTokyo Japan
imec.availabilityPublished - imec


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