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Analysis of sense margin and reliability of 1T-DRAM fabricated on thin-film UTBOX substrates

dc.contributor.authorCollaert, Nadine
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorRakowski, Michal
dc.contributor.authorDe Wachter, Bart
dc.contributor.authorBourdelle, K.
dc.contributor.authorNguyen, B.-Y.
dc.contributor.authorBoedt, F.
dc.contributor.authorDelprat, D.
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-17T21:39:14Z
dc.date.available2021-10-17T21:39:14Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15123
dc.sourceIIOimport
dc.titleAnalysis of sense margin and reliability of 1T-DRAM fabricated on thin-film UTBOX substrates
dc.typeProceedings paper
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorRakowski, Michal
dc.contributor.imecauthorDe Wachter, Bart
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewno
dc.source.conferenceIEEE International SOI Conference
dc.source.conferencedate5/10/2009
dc.source.conferencelocationFoster City, CA USA
imec.availabilityPublished - imec


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