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H2O- and O3-based atomic layer deposition of high-K dielectric films on GeO2 passivation layers

dc.contributor.authorDelabie, Annelies
dc.contributor.authorAlian, AliReza
dc.contributor.authorBellenger, Florence
dc.contributor.authorCaymax, Matty
dc.contributor.authorConard, Thierry
dc.contributor.authorFranquet, Alexis
dc.contributor.authorSioncke, Sonja
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorHeyns, Marc
dc.contributor.authorMeuris, Marc
dc.date.accessioned2021-10-17T21:54:26Z
dc.date.available2021-10-17T21:54:26Z
dc.date.issued2009
dc.identifier.issn0013-4651
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15215
dc.sourceIIOimport
dc.titleH2O- and O3-based atomic layer deposition of high-K dielectric films on GeO2 passivation layers
dc.typeJournal article
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewyes
dc.source.beginpageG163
dc.source.endpageG167
dc.source.journalJournal of the Electrochemical Society
dc.source.issue10
dc.source.volume156
imec.availabilityPublished - imec


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