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Synchrotron radiation and conventional X-ray source photoemission studies of epitaxial g-Al2O3 thin films grown on Si(111) & Si(001) substrates by molecular beam epitaxy

dc.contributor.authorEl-Kazzi, Mario
dc.contributor.authorMerckling, Clement
dc.contributor.authorGrenet, Genevieve
dc.contributor.authorSaint-Girons, Guillaume
dc.contributor.authorSirotti, Fausto
dc.contributor.authorHollinger, Guy
dc.date.accessioned2021-10-17T22:05:44Z
dc.date.available2021-10-17T22:05:44Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15272
dc.sourceIIOimport
dc.titleSynchrotron radiation and conventional X-ray source photoemission studies of epitaxial g-Al2O3 thin films grown on Si(111) & Si(001) substrates by molecular beam epitaxy
dc.typeProceedings paper
dc.contributor.imecauthorMerckling, Clement
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.source.peerreviewno
dc.source.beginpageC08-08
dc.source.conferenceCMOS Gate-Stack Scaling - Materials, Interfaces, and Reliability Implications
dc.source.conferencedate13/04/2009
dc.source.conferencelocationSan Fransisco, CA USA
imec.availabilityPublished - imec
imec.internalnotesMRS Symposium Proceedings; Vol. 1155


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