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Sub-nanometer two-dimensional carrier profiling in silicon MOS technologies using high vacuum scanning spreading resistance microscopy

dc.contributor.authorEyben, Pierre
dc.contributor.authorMody, Jay
dc.contributor.authorNazir, Aftab
dc.contributor.authorSchulze, Andreas
dc.contributor.authorHantschel, Thomas
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-17T22:09:15Z
dc.date.available2021-10-17T22:09:15Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15288
dc.sourceIIOimport
dc.titleSub-nanometer two-dimensional carrier profiling in silicon MOS technologies using high vacuum scanning spreading resistance microscopy
dc.typeMeeting abstract
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorNazir, Aftab
dc.contributor.imecauthorHantschel, Thomas
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecHantschel, Thomas::0000-0001-9476-4084
dc.source.peerreviewno
dc.source.beginpage2004
dc.source.conference216th ECS Meeting
dc.source.conferencedate4/10/2009
dc.source.conferencelocationVienna Austria
imec.availabilityPublished - imec
imec.internalnotesMeeting Abstracts; Vol. MA 2009-02


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