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Double patterning lithography for 32 nm: critical dimensions uniformity and overlay control considerations

dc.contributor.authorFinders, Jo
dc.contributor.authorDusa, Mircea
dc.contributor.authorVleeming, Bert
dc.contributor.authorHepp, Birgitt
dc.contributor.authorMaenhoudt, Mireille
dc.contributor.authorCheng, Shaunee
dc.contributor.authorVandeweyer, Tom
dc.date.accessioned2021-10-17T22:13:59Z
dc.date.available2021-10-17T22:13:59Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15310
dc.sourceIIOimport
dc.titleDouble patterning lithography for 32 nm: critical dimensions uniformity and overlay control considerations
dc.typeJournal article
dc.contributor.imecauthorDusa, Mircea
dc.contributor.imecauthorVandeweyer, Tom
dc.source.peerreviewno
dc.source.beginpage11002
dc.source.journalJ. Micro/Nanolithography, MEMS, and MOEMS
dc.source.issue1
dc.source.volume8
dc.identifier.urlhttp://spiedl.aip.org/
imec.availabilityPublished - imec


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