III-nitrides for high power switching devices based on large diameter GaN-on-Si technology
dc.contributor.author | Germain, Marianne | |
dc.contributor.author | Derluyn, Joff | |
dc.contributor.author | Van Hove, Marleen | |
dc.contributor.author | Degroote, Stefan | |
dc.contributor.author | Das, Jo | |
dc.contributor.author | Cheng, Kai | |
dc.contributor.author | Borghs, Gustaaf | |
dc.date.accessioned | 2021-10-17T22:20:47Z | |
dc.date.available | 2021-10-17T22:20:47Z | |
dc.date.issued | 2009 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/15341 | |
dc.source | IIOimport | |
dc.title | III-nitrides for high power switching devices based on large diameter GaN-on-Si technology | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Borghs, Gustaaf | |
dc.source.peerreview | no | |
dc.source.conference | IEEE International Conference on IC Design & Technology | |
dc.source.conferencedate | 18/05/2009 | |
dc.source.conferencelocation | Austin, TX USA | |
imec.availability | Published - imec |
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