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dc.contributor.authorThrush, E. J.
dc.contributor.authorCrawley, J. A.
dc.contributor.authorVan der Stricht, Wim
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorMay, L.
dc.contributor.authorNicholls, E.
dc.contributor.authorVergani, G.
dc.date.accessioned2021-09-29T15:32:32Z
dc.date.available2021-09-29T15:32:32Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1534
dc.sourceIIOimport
dc.titleMOCVD-growth of gallium nitride
dc.typeProceedings paper
dc.contributor.imecauthorMoerman, Ingrid
dc.source.peerreviewno
dc.source.beginpage2
dc.source.endpage1-Oct
dc.source.conferenceIEE Colloquium on Wide Bandgap Semiconductor Light Emitters; 16 October 1996; London, UK.
dc.source.conferencelocation
imec.availabilityPublished - imec


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