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Investigation of fired and non-fired Si-SiNx interface properties by deep-level transient spectroscopy measurements

dc.contributor.authorGong, Chun
dc.contributor.authorSimoen, Eddy
dc.contributor.authorYang, Rui
dc.contributor.authorPosthuma, Niels
dc.contributor.authorVan Kerschaver, Emmanuel
dc.contributor.authorPoortmans, Jef
dc.contributor.authorMertens, Robert
dc.date.accessioned2021-10-17T22:26:13Z
dc.date.available2021-10-17T22:26:13Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15364
dc.sourceIIOimport
dc.titleInvestigation of fired and non-fired Si-SiNx interface properties by deep-level transient spectroscopy measurements
dc.typeProceedings paper
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorMertens, Robert
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewno
dc.source.beginpage1210-Q05-04
dc.source.conferenceMRS Fall Meeting Symposium Q: Photovoltaic Materials and Manufacturing Issues II
dc.source.conferencedate30/11/2009
dc.source.conferencelocationBoston, MA USA
imec.availabilityPublished - imec
imec.internalnotesMRS Symposium Proceedings; Vol. 1210


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