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Another approach to form p+ emitter for Cz rear junction n-type solar cells: above 17% efficiency cells with CVD boron-doped epitaxial emitter

dc.contributor.authorGong, Chun
dc.contributor.authorVan Nieuwenhuysen, Kris
dc.contributor.authorPosthuma, Niels
dc.contributor.authorVan Kerschaver, Emmanuel
dc.contributor.authorPoortmans, Jef
dc.date.accessioned2021-10-17T22:26:40Z
dc.date.available2021-10-17T22:26:40Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15366
dc.sourceIIOimport
dc.titleAnother approach to form p+ emitter for Cz rear junction n-type solar cells: above 17% efficiency cells with CVD boron-doped epitaxial emitter
dc.typeProceedings paper
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage107
dc.source.endpage108
dc.source.conference19th International Photovoltaic Science and Engineering Conference and Exhibition - PVSEC
dc.source.conferencedate9/11/2009
dc.source.conferencelocationJeju Korea
imec.availabilityPublished - open access


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