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Depth resolution and surface transients in crystalline Silicon at ultra low energies

dc.contributor.authorGoossens, Jozefien
dc.contributor.authorBerghmans, Bart
dc.contributor.authorFranquet, Alexis
dc.contributor.authorNguyen, Duy
dc.contributor.authorDelmotte, Joris
dc.contributor.authorGeenen, Luc
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-10-17T22:27:59Z
dc.date.available2021-10-17T22:27:59Z
dc.date.issued2009-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15372
dc.sourceIIOimport
dc.titleDepth resolution and surface transients in crystalline Silicon at ultra low energies
dc.typeMeeting abstract
dc.contributor.imecauthorFranquet, Alexis
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecFranquet, Alexis::0000-0002-7371-8852
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.source.peerreviewno
dc.source.beginpage247
dc.source.conference17th International Conference on Secondary Ion Mass Spectrometry - SIMS XVII
dc.source.conferencedate14/08/2009
dc.source.conferencelocationToronto Canada
imec.availabilityPublished - imec


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