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dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorKittl, Jorge
dc.contributor.authorDe Vos, Joeri
dc.contributor.authorRothschild, Aude
dc.contributor.authorBlomme, Pieter
dc.contributor.authorWellekens, Dirk
dc.contributor.authorRuiz Aguado, Daniel
dc.contributor.authorJurczak, Gosia
dc.contributor.authorVan Houdt, Jan
dc.date.accessioned2021-10-17T22:31:04Z
dc.date.available2021-10-17T22:31:04Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15385
dc.sourceIIOimport
dc.titleThe Flash Memory for the nodes to come: material issues from a device perspective
dc.typeProceedings paper
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorDe Vos, Joeri
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecDe Vos, Joeri::0000-0002-9332-9336
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage649
dc.source.endpage668
dc.source.conferenceSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10
dc.source.conferencedate24/05/2009
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 19, issue 2


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