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Dose enhancement due to interconnects in deep-submicron MOSFETs exposed to X-rays

dc.contributor.authorGriffoni, Alessio
dc.contributor.authorSilvestri, Marco
dc.contributor.authorGerardin, Simone
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorPaccagnella, Alessandro
dc.contributor.authorKaczer, Ben
dc.contributor.authorde Potter de ten Broeck, Muriel
dc.contributor.authorVerbeeck, Rita
dc.contributor.authorNackaerts, Axel
dc.date.accessioned2021-10-17T22:33:51Z
dc.date.available2021-10-17T22:33:51Z
dc.date.issued2009
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15397
dc.sourceIIOimport
dc.titleDose enhancement due to interconnects in deep-submicron MOSFETs exposed to X-rays
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorde Potter de ten Broeck, Muriel
dc.contributor.imecauthorVerbeeck, Rita
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage2205
dc.source.endpage2212
dc.source.journalIEEE Transactions on Nuclear Science
dc.source.issue4, part 2
dc.source.volume56
imec.availabilityPublished - open access


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