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High growth rate P-doping using (110)-oriented single crystaldiamond substrates

dc.contributor.authorHaenen, Ken
dc.contributor.authorLazea, A.
dc.contributor.authorMortet, Vincent
dc.contributor.authorJomard, F.
dc.contributor.authorBarjon, J.
dc.date.accessioned2021-10-17T22:38:32Z
dc.date.available2021-10-17T22:38:32Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15417
dc.sourceIIOimport
dc.titleHigh growth rate P-doping using (110)-oriented single crystaldiamond substrates
dc.typeOral presentation
dc.contributor.imecauthorHaenen, Ken
dc.contributor.orcidimecHaenen, Ken::0000-0001-6711-7367
dc.source.peerreviewno
dc.source.conference20th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, and Nitrides
dc.source.conferencedate8/09/2009
dc.source.conferencelocationAthens Greece
imec.availabilityPublished - imec


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