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High performance 70 nm germanium pMOSFETs with boron LDD implants

dc.contributor.authorHellings, Geert
dc.contributor.authorMitard, Jerome
dc.contributor.authorEneman, Geert
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorBrunco, David
dc.contributor.authorShamiryan, Denis
dc.contributor.authorVandeweyer, Tom
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-17T22:47:19Z
dc.date.available2021-10-17T22:47:19Z
dc.date.issued2009
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15451
dc.sourceIIOimport
dc.titleHigh performance 70 nm germanium pMOSFETs with boron LDD implants
dc.typeJournal article
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorVandeweyer, Tom
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewyes
dc.source.beginpage88
dc.source.endpage90
dc.source.journalIEEE Electron Device Letters
dc.source.issue1
dc.source.volume30
dc.identifier.urlhttp://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4717293
imec.availabilityPublished - imec


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