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Structural and electrical properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)

dc.contributor.authorHurley, P.K.
dc.contributor.authorO'Connor, E.
dc.contributor.authorMonaghan, S.
dc.contributor.authorLong, R.D.
dc.contributor.authorO'Mahony, A.
dc.contributor.authorPovey, I.M.
dc.contributor.authorCherkaoui, K.
dc.contributor.authorMacHale, J.
dc.contributor.authorQuinn, A.J.
dc.contributor.authorBrammertz, Guy
dc.contributor.authorHeyns, Marc
dc.contributor.authorNewcomb, S.B.
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorSonnet, A.M.
dc.contributor.authorGalatage, R.V.
dc.contributor.authorJivani, M.N.
dc.contributor.authorVogel, E.M.
dc.contributor.authorWallace, R.M.
dc.contributor.authorPemble, M.E.
dc.date.accessioned2021-10-17T23:03:05Z
dc.date.available2021-10-17T23:03:05Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15509
dc.sourceIIOimport
dc.titleStructural and electrical properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)
dc.typeProceedings paper
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage113
dc.source.endpage127
dc.source.conferenceHigh Dielectric Constant Materials and Gate Stacks 7
dc.source.conferencedate4/10/2009
dc.source.conferencelocationVienna Austria
imec.availabilityPublished - open access
imec.internalnotesECS Transactions; Vol. 25, issue 6


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