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Capacitance-voltage and conductance analysis of high-k/InxGa1-xAs structures (x = 0, 0.15, 0.3, and 0.53)

dc.contributor.authorHurley, P.K.
dc.contributor.authorO'Connor, E.
dc.contributor.authorMonaghan, S.
dc.contributor.authorLong, R.D.
dc.contributor.authorO'Mahony, A.
dc.contributor.authorPovey, I.M.
dc.contributor.authorCherkaoui, K.
dc.contributor.authorPemble, M.E.
dc.contributor.authorMacHale, J.
dc.contributor.authorQuinn, A.J.
dc.contributor.authorBrammertz, Guy
dc.contributor.authorHeyns, Marc
dc.contributor.authorNewcomb, S.B.
dc.contributor.authorAfanasiev, Valeri
dc.date.accessioned2021-10-17T23:03:23Z
dc.date.available2021-10-17T23:03:23Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15510
dc.sourceIIOimport
dc.titleCapacitance-voltage and conductance analysis of high-k/InxGa1-xAs structures (x = 0, 0.15, 0.3, and 0.53)
dc.typeMeeting abstract
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage2115
dc.source.conference216th ECS Meeting
dc.source.conferencedate4/10/2009
dc.source.conferencelocationVienna Austria
imec.availabilityPublished - open access
imec.internalnotesMeeting Abstracts; Vol. MA2009-02


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