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dc.contributor.authorKaczer, Ben
dc.date.accessioned2021-10-17T23:15:39Z
dc.date.available2021-10-17T23:15:39Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15556
dc.sourceIIOimport
dc.titleGate oxide breakdown in FET devices and circuits (Tutorial)
dc.typeOral presentation
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.source.peerreviewno
dc.source.conference47th Annual IEEE International Reliability Physics Symposium
dc.source.conferencedate26/04/2009
dc.source.conferencelocationMontreal Canada
imec.availabilityPublished - imec


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