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Improvement in NBTI reliability of Si-passivated Ge/high-k/metal-gate pFETs

dc.contributor.authorKaczer, Ben
dc.contributor.authorFranco, Jacopo
dc.contributor.authorMitard, Jerome
dc.contributor.authorRoussel, Philippe
dc.contributor.authorVeloso, Anabela
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-17T23:15:57Z
dc.date.available2021-10-17T23:15:57Z
dc.date.issued2009-06
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15557
dc.sourceIIOimport
dc.titleImprovement in NBTI reliability of Si-passivated Ge/high-k/metal-gate pFETs
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1582
dc.source.endpage1584
dc.source.journalMicroelectronic Engineering
dc.source.issue7_9
dc.source.volume86
imec.availabilityPublished - open access
imec.internalnotesINFOS 2009


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