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Significant reduction of positive bias temperature instability in high-k/metal-gate nFETs by incorporation of rare earth metals

dc.contributor.authorKaczer, Ben
dc.contributor.authorVeloso, Anabela
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-17T23:16:30Z
dc.date.available2021-10-17T23:16:30Z
dc.date.issued2009-06
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15559
dc.sourceIIOimport
dc.titleSignificant reduction of positive bias temperature instability in high-k/metal-gate nFETs by incorporation of rare earth metals
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1894
dc.source.endpage1896
dc.source.journalMicroelectronic Engineering
dc.source.issue7_9
dc.source.volume86
imec.availabilityPublished - open access
imec.internalnotesINFOS 2009


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